vn2222 series n-channel enhancement-mode mos transistors vn2222 series features low r ds(on) <7.5 w applications switching amplification ordering information part package temperature range VN2222LL plastic to-92 -55 o c to +150 o c vn2222lm plastic to-237 -55 o c to +150 o c for sorted chips in carriers see 2n7000 corporation pin connections absolute maximum ratings (t a = 25 o c unless otherwise noted) symbol parameters/test conditions limits units VN2222LL vn2222lm v ds drain-source voltage 60 60 v v gs gate-source voltage 30 30 i d continuous drain current t a = 25 o c 0.23 0.26 a t a = 100 o c 0.14 0.16 i dm pulsed drain current 1 11 p d power dissipation t a = 25 o c0.81 w t a = 100 o c 0.32 0.4 t j , t stg operating junction & storage temperature range -55 to 150 o c t l lead temperature (1/16" from case for 10 sec.) 300 thermal resistance ratings symbol thermal resistance limits units VN2222LL vn2222lm r thja junction-to-ambient 156 125 k/w 1 pulse width limited by maximum junction temperature. to-237 to-92 (to-226aa) 3 2 1 bottom view 1. source 2. gate 3. drain 3 2 1 bottom view 1. source 2. gate 3. tab-drain 3 2 1 cd5
vn2222 series corporation specifications a limits symbol parameter typ b min max unit test conditions static v (br)dss drain-source breakdown voltage 70 60 v i d = 100 m a, v gs = 0v v gs(th) gate-threshold voltage 2.3 0.6 2.5 v ds = v gs , i d = 1ma i gss gate-body leakage 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current 10 m a v ds = 48v, v gs = 0v 500 t j = 125 o c i d(on) on-state drain current c 1000 750 ma v ds = 10v, v gs = 10v r ds(on) drain-source on-resistance c 57.5 w v gs = 5v, i d = 0.2a 2.5 7.5 v gs = 10v, i d = 0.5a 4.4 13.5 t j = 125 o c g fs forward transconductance c 230 100 ms v ds = 10v, i d = 0.5a g os common source output conductance c 1200 m sv ds = 10v, i d = 0.2a dynamic c iss input capacitance 16 60 pf v ds = 25v, v gs = 0v, f = 1mhz c oss output capacitance 11 25 c rss reverse transfer capacitance 2 5 switching t on turn-on time 7 10 ns v dd = 15v, r l = 23 w , i d = 0.6a v gen = 10v, r g = 25 w t off turn-off time 7 10 (switching time is essentially independent of operating temperature) notes: a. t a = 25 o c unless otherwise noted. b. for design aid only, not subject to production testing. c. pulse test; pw = 300 m s, duty cycle 2%.
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